GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates
Autor: | Houyao Xue, Tsubasa Saito, Sora Saito, Yuichi Sato, Shingo Taniguchi |
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Rok vydání: | 2021 |
Předmět: |
Materials science
Silicon business.industry Physics QC1-999 General Physics and Astronomy chemistry.chemical_element Gallium nitride Substrate (electronics) law.invention chemistry.chemical_compound chemistry Si substrate law Optoelectronics business Bright light Nanopillar Diode Light-emitting diode |
Zdroj: | AIP Advances, Vol 11, Iss 7, Pp 075110-075110-4 (2021) |
ISSN: | 2158-3226 |
Popis: | For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p–n-junction structures were fabricated, and bright light emission was obtained from the diodes. In addition, white-light emission was observed in another diode. The multi-crystalline Si substrate can be added to a candidate substrate to realize practical, novel, large-area light-emitting devices. |
Databáze: | OpenAIRE |
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