Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs

Autor:	Enrico Sangiorgi, Claudio Fiegna, Peter Baumgartner, Nicola Zanolla, Domagoj Siprak
Přispěvatelé:	D. ESSENI, P. PALESTRI, L. SELMI, N. Zanolla, D. Siprak, P. Baumgartner, E. Sangiorgi, C. Fiegna
Rok vydání:	2008
Předmět:	Physics Infrasound Time constant Signal Cutoff frequency Computational physics RTS NOISE MOSFET MODELING CMOS LOW-FREQUENCY NOISE Electronic engineering EXPERIMENTAL CHARACTERIZATION Quantum tunnelling Voltage
Zdroj:	2008 9th International Conference on Ultimate Integration of Silicon.
DOI:	10.1109/ulis.2008.4527158
Popis:	Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fb37955f247ab3d7748eb3af5acae96 https://doi.org/10.1109/ulis.2008.4527158 Zobrazit plný text záznamu