Half-occupation approach for the ab initio calculation of strained Ga(AsSb)/GaAs valence band offsets
| Autor: | J. O. Oelerich, M. J. Weseloh, Stephan W. Koch |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Offset (computer science) Materials science business.industry Electromagnetic spectrum Ab initio General Physics and Astronomy Heterojunction 02 engineering and technology Optically active Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics lcsh:QC1-999 Condensed Matter::Materials Science Semiconductor 0103 physical sciences Valence band 0210 nano-technology business lcsh:Physics Quantum well |
| Zdroj: | AIP Advances, Vol 10, Iss 4, Pp 045207-045207-4 (2020) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/5.0001300 |
| Popis: | An ab initio based scheme for the determination of the valence band offset between different III–V semiconductor systems is presented on the example of GaAs and Ga(AsSb) pseudomorphically strained to GaAs for Sb concentrations up to 37.5%. Modified core-to-valence band maximum calculations are used in combination with the half-occupation technique. The valence band offsets between GaAs and Ga(AsSb) are needed for the predictive design of optically active quantum well heterostructures emitting in the near-infrared region of the electromagnetic spectrum. |
| Databáze: | OpenAIRE |
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