Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments
Autor: | Ronald D. Schrimpf, C. Chatry, Jerome Boch, Eric Lorfevre, Laurent Dusseau, S. Ducret, M. Bernard, Frédéric Saigné, J.-R. Vaille |
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Přispěvatelé: | Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Vanderbilt University School of Engineering [Nashville] (VUSE), Centre National d'Études Spatiales [Toulouse] (CNES), Centre d'Electronique et de Micro-optoélectronique de Montpellier ( CEM2 ), Université Montpellier 2 - Sciences et Techniques ( UM2 ) -Centre National de la Recherche Scientifique ( CNRS ), Vanderbilt University School of Engineering [Nashville] ( VUSE ), Techniques of Informatics and Microelectronics for integrated systems Architecture ( TIMA ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Institut National Polytechnique de Grenoble ( INPG ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes ( UGA ), Centre National d'Etudes Spatiales ( CNES ) |
Rok vydání: | 2005 |
Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science 010308 nuclear & particles physics Integrated circuit 01 natural sciences [ SPI.TRON ] Engineering Sciences [physics]/Electronics [SPI.TRON]Engineering Sciences [physics]/Electronics law.invention Linear integrated circuits Nuclear Energy and Engineering law Total dose 0103 physical sciences Electronic engineering Dosimetry Degradation (geology) Low dose rate Irradiation Electrical and Electronic Engineering Dose rate ComputingMilieux_MISCELLANEOUS |
Zdroj: | IEEE Transactions on Nuclear Science IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2005, VOL 52 (NUMB 6), p. 2616-2621. ⟨10.1109/TNS.2005.860711⟩ 42th IEEE Nuclear Space and Radiation Effects Conference 42th IEEE Nuclear Space and Radiation Effects Conference, 2005, Seattle, United States |
ISSN: | 0018-9499 |
Popis: | The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation. |
Databáze: | OpenAIRE |
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