Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and X-ray irradiation
| Autor: | M.-C. Vassal, P. Kohler, J. Boch, T. Maraine, Vincent Pouget, Pierre Wang, Frédéric Saigné |
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| Přispěvatelé: | 3D Plus, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Absorbed dose Nuclear engineering Biasing Sensitivity (control systems) [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Dram Energy (signal processing) ComputingMilieux_MISCELLANEOUS Parametric statistics Dynamic testing Power (physics) [SPI.TRON]Engineering Sciences [physics]/Electronics |
| Zdroj: | European Conference on Radiation Effects on Components and Systems (RADECS) European Conference on Radiation Effects on Components and Systems (RADECS), Sep 2018, Goteborg, Sweden |
| Popis: | This paper presents an analysis of the TID sensitivity of Commercial Off-the-Shelf (COTS) DDR3 memories. Experimental setup and results following 60 CO and X-ray characterization campaigns using dynamic test methods are described. Parametric drifts and functional failures, including data retention time test, are observed and discussed. An additional 60 CO test campaign, using static test method highlights the impact of the applied biasing mode during gamma ray irradiation. As energy saving has become increasingly a key driver of the DRAMs evolution, manufacturers has developed operating low power modes, that can be activated while the component is idle, reducing its power consumption. This paper experimentally reveals a TID-induced higher sensitivity of those low power modes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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