Structure property relations of BST thin films
| Autor: | Peter Ehrhart, F. Schienle, S. Regnery, H. Juergensen, Fotios Fitsilis, Rainer Waser, M. Schumacher |
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| Rok vydání: | 2001 |
| Předmět: |
Permittivity
Materials science Molar concentration Condensed Matter Physics Microstructure Electronic Optical and Magnetic Materials Control and Systems Engineering Materials Chemistry Ceramics and Composites Deposition (phase transition) Wafer Texture (crystalline) Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film Composite material |
| Zdroj: | ResearcherID |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | We report on the properties of thin BST films which were grown in a planetary multi-wafer MOCVD reactor which handles 5 six inch wafers simultaneously. The reactor is combined with a liquid delivery system which mixes the liquid precursors from three different sources: 0.35 molar solutions of Ba(thd)2 and Sr(thd)2 and a 0.4 molar solution of Ti(O-i-Pr)2(thd)2. Film growth on strongly (111)-textured Pt substrates is investigated within a wide parameter field. We focus on the properties of films with the composition Ba0.7Sr0.3TiO3 and thickness between 10 and 130 nm. Topics to be discussed include: the change of the texture of the BST films, which is (100) for deposition temperatures above 600°C and changes to a random orientation at lower temperature, and a comparison of planar films with films on structured substrates. The electrical properties, e.g., permittivity and leakage current, are discussed in relation to the microstructure. |
| Databáze: | OpenAIRE |
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