Young's modulus and residual stress of GeSbTe phase-change thin films
| Autor: | Harish Bhaskaran, Leon Abelmann, H. Nazeer, Léon A. Woldering |
|---|---|
| Přispěvatelé: | Faculty of Electrical Engineering, Mathematics and Computer Science |
| Rok vydání: | 2015 |
| Předmět: |
Phase transition
Materials science Young's modulus Modulus Cantilever resonance 02 engineering and technology GeSbTe 01 natural sciences Strain Stress (mechanics) symbols.namesake chemistry.chemical_compound Optics Residual stress Phase (matter) 0103 physical sciences Materials Chemistry Phase change Thin film Composite material 010302 applied physics business.industry Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology n/a OA procedure Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry symbols 0210 nano-technology business |
| Zdroj: | Thin solid films, 592(Part A), 69-75. Elsevier |
| ISSN: | 0040-6090 |
| Popis: | The mechanical properties of phase change materials alter when the phase is transformed. In this paper, we report on experiments that determine the change in crucial parameters such as Young's modulus and residual stress for two of the most widely employed compositions of phase change films, Ge1Sb2Te4 and Ge2Sb2Te5, using an accurate microcantilever methodology. The results support understanding of the exact mechanisms that account for the phase transition, especially with regard to stress, which leads to drift in non-volatile data storage. Moreover, detailed information on the change in mechanical properties will enable the design of novel low-power nonvolatile MEMS. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect