Inside a nanocrystal-based photodiode using photoemission microscopy

Autor: Mariarosa Cavallo, Rodolphe Alchaar, Erwan Bossavit, Huichen Zhang, Tung Huu Dang, Adrien Khalili, Yoann Prado, Mathieu G. Silly, James K. Utterback, Sandrine Ithurria, Pavel Dudin, José Avila, Debora Pierucci, Emmanuel Lhuillier
Přispěvatelé: Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Nanostructures et optique (INSP-E4), Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), CNRS - MITI-Within, ANR-19-CE24-0022,COPIN,Détecteur plasmonique à nanoCristaux colloïdaux: une nouvelle filière pour l'OPtoélectronique INfrarouge(2019), ANR-19-CE09-0017,FRONTAL,Nanocristaux Colloïdaux Dopés Infrarouges(2019), ANR-21-CE24-0012,BRIGHT,Diode électroluminescente infrarouge brillante par exaltation du couplage lumière-matière(2021), ANR-22-CE09-0018,QuickTera,Nanocristaux de HgTe une nouvelle plateforme pour l'optoélectronique THz(2022), ANR-19-CE09-0026,GRaSkop,Tuning Giant Rashba Spin-Orbit Coupling in Polar Single Layer Transition Metal Dichalcogenides(2019), ANR-20-ASTR-0008,NITquantum,Design et fabrication d'un plan focal dans le proche infrarouge à base de nanocrisrtaux(2020), European Project: 756225,blackQD, European Project: 101086358,AQDtive
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Nanoscale
Nanoscale, In press, ⟨10.1039/D3NR00999H⟩
ISSN: 2040-3364
2040-3372
Popis: International audience; As nanocrystal-based devices gain maturity, a comprehensive understanding of their electronic structure is necessary for further optimization. Most spectroscopic techniques typically examine pristine materials and disregard the coupling of the active material to its actual environment, the influence of an applied electric field, and possible illumination effects. Therefore, it is critical to develop tools that can probe device in situ and operando. Here, we explore photoemission microscopy as a tool to unveil the energy landscape of a HgTe NC-based photodiode. We propose a planar diode stack to facilitate surface-sensitive photoemission measurements. We demonstrate that the method gives direct quantification of the diode's built-in voltage. Furthermore, we discuss how it is affected by particle size and illumination. We show that combining SnO2 and Ag2Te as electron and hole transport layers is better suited for extended-short-wave infrared materials than materials with larger bandgaps. We also identify the effect of photodoping over the SnO2 layer and propose a strategy to overcome it. Given its simplicity, the method appears to be of utmost interest for screening diode design strategies.
Databáze: OpenAIRE
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