Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas
| Autor: | Michele Ortolani, P. Romanini, Vittorio Foglietti, Ennio Giovine, Florestano Evangelisti, D. Dominijanni, R. Casini, A. Di Gaspare, Marco Peroni |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Heterostructure field-effect transistors
Air-bridges GaAs Materials science Silicon business.industry Terahertz radiation Schottky barrier Transistor Schottky diode chemistry.chemical_element Metal–semiconductor junction law.invention Lens (optics) Terahertz detectors chemistry law Field-Effect transistors Optoelectronics Field-effect transistor business |
| Zdroj: | 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Houston, TX, 02-07/10/2011 info:cnr-pdr/source/autori:Di Gaspare, A.; Casini, R.; Ortolani, M.; Giovine, E.; Foglietti, V.; Romanini, P.; Dominijanni, D.; Peroni, M.; Evangelisti, F./congresso_nome:36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)/congresso_luogo:Houston, TX/congresso_data:02-07%2F10%2F2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine IEEE Proc. of IR, milli. and THz Waves IRMMW-THz, 2011 info:cnr-pdr/source/autori:A. Di Gaspare, R. Casini, M. Ortolani, E. Giovine, V. Foglietti, P. Romanini, D. Dominijanni, M. Peroni, F. Evangelisti/congresso_nome:, IEEE Proc. of IR, milli. and THz Waves IRMMW-THz/congresso_luogo:/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine |
| Popis: | We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared. © 2011 IEEE. |
| Databáze: | OpenAIRE |
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