| Autor: |
Motohiro Kohno, Shin Yokoyama, Toshikazu Kitajima, Sadao Hirae |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. |
| Popis: |
In this study, we discuss a new method to evaluate surface contamination on oxidized silicon using noncontact capacitance-voltage measurement under UV irradiation. The UV light of wavelengths ranging from 240 nm to 290 nm generates a negative charge on the SiO2 surface without generating a positive charge and damage in SiO2. Their light wavelength dependence indicates that the photoexcited electrons are injected from Si into SiO2 and subsequently trapped at the SiO2 surface. The UV-induced charge increases when the wafer is stored in the plastic wafer box after the oxidation. From the Fourier transform infrared attenuated total reflection (FTIR-ATR) measurement, it is found that storage time dependence of the adsorbed organic contaminants (CH2 and CH3 groups) increases with the UV-induced charge. Furthermore, the Arrhenius plot of the UV-induced charge suggests that the adsorbed contaminant is bound on the surface with the hydrogen bond. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
