Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Autor:	Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon
Rok vydání:	2022
Předmět:	General Materials Science
Zdroj:	ACS Applied Materials & Interfaces. 14:31010-31023
ISSN:	1944-8252 1944-8244
Popis:	Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ea49ebca5d5d6499aa63a34abeb8d65 https://doi.org/10.1021/acsami.2c07258 Zobrazit plný text záznamu