Hot-electron transport in 3-terminal devices based on magnetic tunnel junctions
| Autor: | Van Dau, H. Jaffrès, Michel Hehn, Daniel Lacour, François Montaigne, Frédéric Petroff, P. Rottländer, F. Nguyen, Alain Schuhl |
|---|---|
| Přispěvatelé: | Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2002 |
| Předmět: |
Electron mobility
Materials science Magnetoresistance General Physics and Astronomy 02 engineering and technology 01 natural sciences law.invention Tunnel effect Nuclear magnetic resonance Triode law Tunnel junction Condensed Matter::Superconductivity 0103 physical sciences [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 010306 general physics Quantum tunnelling Diode Common emitter [PHYS]Physics [physics] Spin polarization Condensed matter physics Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Tunnel magnetoresistance Ferromagnetism Electrode 0210 nano-technology Voltage |
| Zdroj: | EPL-Europhysics Letters EPL-Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2002, 60, pp.896-902 |
| ISSN: | 1286-4854 0295-5075 |
| Popis: | Summary form only given. Magnetic field-dependent electrical characteristics of magnetic tunnel junction-based 3-terminal devices have been measured on M/sub 1//I/sub 1//M/sub 2//I/sub 2//M/sub 3/ stacks where M are ferromagnetic electrodes and I are insulating barriers (Al/sub 2/O/sub 3/ or TaO). A spin polarised current is pumped from the voltage biased M/sub 1//I/sub 1//M/sub 2/ junction and injected in the I/sub 2//M/sub 3/ collector junction. The collected current in M/sub 3/ is then dependent on the voltages applied to each tunnel junction, the orientation of the electrode magnetisations and the thickness of the M/sub 2/ electrode. Besides the fundamental interest in measuring the properties of nonequilibrium spin-dependent hot electron transport, 3-terminal devices appear to be good candidates for a new generation of magnetic field-dependent devices. The control of hot electron transmission in a double tunnel junction is the keystone to ensure asymmetric diodes or hot electron magnetic field-dependent transistors. Experimental results have been compared to computations made in the framework of the parabolic band model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|