Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics
| Autor: | Angelika Balliou, Stella Kennou, George Skoulatakis, M. Bouroushian, Antonios M. Douvas, Nikos Glezos |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Oxide Bioengineering 02 engineering and technology Electronic structure Electron 010402 general chemistry 01 natural sciences chemistry.chemical_compound Transition metal General Materials Science Electrical and Electronic Engineering Spectroscopy business.industry Mechanical Engineering Molecular electronics General Chemistry 021001 nanoscience & nanotechnology Electron localization function 0104 chemical sciences chemistry Mechanics of Materials Polyoxometalate Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanotechnology. 29:275204 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/1361-6528/aabdc3 |
| Popis: | All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature. |
| Databáze: | OpenAIRE |
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