An 8 channel, 20 V output CMOS switching driver with 3.3 V power supply using triple-well biasing techniques for integrated MEMS device control
| Autor: | Xiaoyu Mi, Fumihiko Nakazawa, Noboru Ishihara, Daisuke Yamane, Kazuya Masu, Hiroaki Inoue, Satoshi Ueda, Hiroyuki Ito, Atsushi Shirane, Motohiro Takayasu, Sangyeop Lee |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Capacitive sensing Transistor General Engineering Electrical engineering General Physics and Astronomy Biasing Hardware_PERFORMANCEANDRELIABILITY law.invention Switching time Capacitor CMOS Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Charge pump business Hardware_LOGICDESIGN Voltage |
| Zdroj: | Japanese Journal of Applied Physics. 53(no. 4S) |
| Popis: | An 8 channel output switching driver has been implemented for integrated micro-electro-mechanical systems (MEMS) device control using the 0.18 µm CMOS process technology. The driver can output 20 V switching signals for 1 nF capacitive loads with a 3.3 V power supply. The switching time is less than 100 µs. To obtain a high output voltage that exceeds the transistors’ and capacitors’ breakdown voltages, a new charge pump and a discharge circuit, using optimal transistor-well-biasing techniques for triple-well-structured n-MOS transistors, were investigated, and the circuit parameters were also optimized to obtain high-speed switching. |
| Databáze: | OpenAIRE |
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