Temperature-dependent fine structure splitting in InGaN quantum dots
| Autor: | Wang, T, Puchtler, TJ, Zhu, T, Jarman, J, Kocher, CC, Oliver, RA, Taylor, RA |
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| Přispěvatelé: | Zhu, Tongtong [0000-0002-9481-8203], Jarman, John [0000-0001-8095-8603], Oliver, Rachel [0000-0003-0029-3993], Apollo - University of Cambridge Repository |
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| Zdroj: | Applied Physics Letters. 111(5) |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 and 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single-photon sources. |
| Databáze: | OpenAIRE |
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