Study of TaN and TaN-Ta-TaN thin films as diffusion barriers in CeFe 4 Sb 12 skutterudite
| Autor: | N. Fréty, R. Viennois, L. Boulat, M. Dadras, E. Oliviero |
|---|---|
| Přispěvatelé: | Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Centre Suisse d'Electronique et de Microtechnique SA [Neuchatel] (CSEM), Centre Suisse d'Electronique et Microtechnique SA (CSEM) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Diffusion barrier Diffusion Analytical chemistry General Physics and Astronomy 02 engineering and technology Substrate (electronics) engineering.material 021001 nanoscience & nanotechnology 01 natural sciences [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry 0103 physical sciences Thermoelectric effect Electrode engineering [CHIM]Chemical Sciences Skutterudite Thin film 0210 nano-technology Layer (electronics) |
| Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2019, 126 (12), pp.125306. ⟨10.1063/1.5105385⟩ |
| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.5105385⟩ |
| Popis: | International audience; The efficiency of thermoelectric devices depends on phase stability of layers constituting the device. TaN and TaN-Ta-TaN thin films, 900 nm thick, were investigated as diffusion barriers for the CeFe4Sb12 thermoelectric substrate in contact with the Cu electrode. It is shown that Sb diffuses through the TaN layer when the sample is heated above 400 °C. Multilayer TaN-Ta-TaN acts as the diffusion barrier for Sb and is efficient up to 500 °C. When diffusion of Sb occurs above 400 °C for TaN and above 500 °C for TaN-Ta-TaN, the formation of FeSb2 and Cu2Sb precipitates was identified by XRD and TEM/energy dispersive X-ray spectroscopy. |
| Databáze: | OpenAIRE |
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