Behavior of gold-doped silicon substrate under small- and large-RF signal
| Autor: | Massinissa Nabet, Martin Rack, Nur Zatil Ismah Hashim, C.H. (Kees) de Groot, Jean-Pierre Raskin |
|---|---|
| Přispěvatelé: | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Rok vydání: | 2020 |
| Předmět: |
inorganic chemicals
Materials science Silicon Physics::Optics chemistry.chemical_element 02 engineering and technology Substrate (electronics) 01 natural sciences symbols.namesake 0103 physical sciences Materials Chemistry Wafer Electrical and Electronic Engineering 010302 applied physics Total harmonic distortion business.industry Fermi level Doping technology industry and agriculture 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry symbols Optoelectronics Radio frequency 0210 nano-technology business DC bias |
| Zdroj: | Solid-State Electronics, Vol. 168, p. 107718 (2020) |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.107718 |
| Popis: | In this paper, small- and large-signal performances of passive devices integrated on high-resistivity, trap-rich and gold-doped silicon wafers are presented and compared through measurements and simulations. The gold-doped silicon substrate was produced starting from standard silicon having a nominal resistivity of 56 cm. We show that the gold-doped substrate presents high effective resistivity and low losses suitable for RF applications. This has been demonstrated by measuring coplanar waveguides, crosstalk, inductors and band pass filter where we observed similar performances for small-signal measurements compared with trap-rich substrate. Large-signal measurements of gold-doped substrates show 60 dBm lower harmonic distortion than high-resistivity substrates, and 10 dB lower than trap-rich substrate at 0 V DC bias. However, a large DC bias dependence on the harmonic distortion induced by the gold-doped substrate is observed. This unexpected behavior is explained using the Fermi level localization in the silicon bandgap for the different DC bias conditions. |
| Databáze: | OpenAIRE |
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