Evaluation of the Microstructure and the Electrochemical Properties of Ce0.8(1−x)Gd0.2(1−x)CuxO[1.9(1−x)+x] Electrolytes for IT-SOFCs
Autor: | Sung Pil Yoon, Jae Kwan Bae, Grazia Accardo |
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Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
Materials science
Analytical chemistry Sintering chemistry.chemical_element 02 engineering and technology sintering aid 010402 general chemistry 01 natural sciences lcsh:Technology lcsh:Chemistry Relative density gadolinium doped ceria General Materials Science sol–gel combustion synthesis SOFC Instrumentation lcsh:QH301-705.5 Gadolinium-doped ceria Fluid Flow and Transfer Processes lcsh:T Process Chemistry and Technology General Engineering Atmospheric temperature range 021001 nanoscience & nanotechnology Microstructure Copper lcsh:QC1-999 0104 chemical sciences Computer Science Applications chemistry lcsh:Biology (General) lcsh:QD1-999 lcsh:TA1-2040 copper Dilatometer 0210 nano-technology lcsh:Engineering (General). Civil engineering (General) lcsh:Physics Solid solution |
Zdroj: | Applied Sciences, Vol 10, Iss 4573, p 4573 (2020) Applied Sciences Volume 10 Issue 13 |
ISSN: | 2076-3417 |
Popis: | The influence of copper addition (0.5&ndash 2 mol%) on the crystal structure, densification microstructure, and electrochemical properties of Ce0.8Gd0.2O1.9 synthesized in a one-step sol&ndash gel combustion synthesis route has been studied. It has been found that Cu is very active as sintering aids, with a significative reduction of GDC firing temperature. A reduction of 500 ° C with a small amount of copper (0.5 mol%) was observed achieving dense bodies with considerable ionic conductivities. Rietveld refined was used to investigate the crystal structure while relative density and microstructural examination were performed in the sintering temperature range of 1000&ndash 1200 ° C after dilatometer analysis. High dense bodies were fabricated at the lowest sintering temperature, which promotes the formation of Ce0.8(1&minus x)Gd0.2(1&minus x)CuxO[1.9(1&minus x)+x] solid solution and the absence of secondary phase Cu-rich or the segregation or copper at the grain boundary. As compared to the pure GDC an improvement of total conductivity was achieved with a maximum for the highest copper content of 2.23·10&minus 3&ndash 9.19·10&minus 2 S cm&minus 1 in the temperature range of 200&ndash 800 ° C. |
Databáze: | OpenAIRE |
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