Ion Trap in a Semiconductor Chip
| Autor: | D. Stick, W. K. Hensinger, S. Olmschenk, M. J. Madsen, K. Schwab, C. Monroe |
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| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Physics::Instrumentation and Detectors
Semiconductor device fabrication Physics::Optics General Physics and Astronomy FOS: Physical sciences Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Physics::Plasma Physics Physics::Atomic Physics Quadrupole ion trap Physics Microelectromechanical systems Condensed Matter::Quantum Gases Quantum Physics business.industry Doping Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Computer Science::Other Semiconductor chemistry Optoelectronics Ion trap Atomic physics business Quantum Physics (quant-ph) |
| Popis: | The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure. 4 pages, 4 figures |
| Databáze: | OpenAIRE |
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