Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
| Autor: | Sabri Alkis, Furkan Cimen, Mustafa Alevli, Nikolaus Dietz, Bülend Ortaç, Ali Kemal Okyay, Ammar Nayfeh, Nazek El-Atab |
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| Přispěvatelé: | Okyay, Ali Kemal, El-Atab, Nazek, Cimen, Furkan, Alkis, Sabri, Orta, Bulend, Alevli, Mustafa, Dietz, Nikolaus, Okyay, Ali K., Nayfeh, Ammar |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Generation Wide-bandgap semiconductor Electron SEMICONDUCTORS Nanocrystals Threshold voltage Atomic layer deposition NANOCRYSTALS BLUE Blue Semiconductor Semiconductors Quantum dot Laser-ablation Optoelectronics LASER-ABLATION business Quantum tunnelling GENERATION Voltage |
| Zdroj: | Applied Physics Letters |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4885397 |
| Popis: | In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V-gate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4V, the memory shows a noticeable threshold voltage (V-iota) shift of 2V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5V is achieved and the V-iota shift direction indicates that electrons tunnel from channel to charge storage layer. (C) 2014 AIP Publishing LLC. |
| Databáze: | OpenAIRE |
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