Properties of uniform diameter InN nanowires obtained under Si doping
| Autor: | F. Limbach, Kulandaivel Jeganathan, T. Gotschke, R. Calarco, Eli Sutter, E. O. Schäfer-Nolte, R. Caterino, Toma Stoica |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Photoluminescence business.industry Scattering Mechanical Engineering Doping Nanowire Bioengineering Nanotechnology General Chemistry Crystal Condensed Matter::Materials Science symbols.namesake Mechanics of Materials Condensed Matter::Superconductivity symbols Optoelectronics General Materials Science Electrical and Electronic Engineering business High-resolution transmission electron microscopy Raman spectroscopy Molecular beam epitaxy |
| Zdroj: | Nanotechnology. 22:125704 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/0957-4484/22/12/125704 |
| Popis: | High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films. |
| Databáze: | OpenAIRE |
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