Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy

Autor:	Chan Gyung Park, S.Y. Lee, Lee Juyeong, Yoongon Kim, Byoung-Dae Lee, Kyu-Taek Lee, Jun-tai Kim
Rok vydání:	2014
Předmět:	Nanostructure Silicon Chemistry Evaporation General Physics and Astronomy chemistry.chemical_element Cell Biology Atom probe Molecular physics law.invention Structural Biology law Transmission electron microscopy Atom Molecule General Materials Science Atomic physics Layer (electronics)
Zdroj:	Micron. 58:32-37
ISSN:	0968-4328
DOI:	10.1016/j.micron.2013.11.003
Popis:	Laser-assisted atom probe tomography has opened the way to three-dimensional visualization of nanostructures. However, many questions related to the laser–matter interaction remain unresolved. We demonstrate that the interface reaction can be activated by laser-assisted field evaporation and affects the quantification of the interfacial composition. At a vertical interface between Si and SiO2, a SiO2 molecule tends to combine with a Si atom and evaporate as a SiO molecule, reducing the evaporation field. The features of the reaction depend on the direction of the laser illumination and the inner structure of tip. A high concentration of SiO is observed at a vertical interface between Si and SiO2 when the Si column is positioned at the center of the tip, whereas no significant SiO is detected when the SiO2 layer is at the center. The difference in the interfacial compositions of two samples was due to preferential evaporation of the Si layer. This was explained using transmission electron microscopy observations before and after atom probe experiments.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d336e93b81e345372d1ab3fc72ea958 https://doi.org/10.1016/j.micron.2013.11.003 Zobrazit plný text záznamu Full Text from ScienceDirect