Distributed and coupled 2D electro-thermal model of power semiconductor devices
| Autor: | Stéphane Lefebvre, Gilles Rostaing, Ghania Belkacem, Pierre-Yves Joubert, Mounira Bouarroudj-Berkani, Denis Labrousse |
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| Přispěvatelé: | Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 7. Clean energy 01 natural sciences Die (integrated circuit) law.invention [SPI]Engineering Sciences [physics] Reliability (semiconductor) Hardware_GENERAL law Power electronics 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Power MOSFET Instrumentation ComputingMilieux_MISCELLANEOUS 010302 applied physics business.industry [SPI.NRJ]Engineering Sciences [physics]/Electric power 020208 electrical & electronic engineering Transistor Electrical engineering Semiconductor device Condensed Matter Physics Electronic Optical and Magnetic Materials Power (physics) Current limiting business |
| Zdroj: | European Physical Journal: Applied Physics European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), ⟨10.1051/epjap/2014130486⟩ |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap/2014130486 |
| Popis: | The development of power electronics in the field of transportations (automotive, aeronautics) requires the use of power semiconductor devices providing protection and diagnostic functions. In the case of series protections power semiconductor devices which provide protection may operate in shortcircuit and act as a current limiting device. This mode of operations is very constraining due to the large dissipation of power. In these particular conditions of operation, electro-thermal models of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors based on the coupling between two computation softwares (Matlab and Cast3M) is described in this paper. The 2D electro-thermal model is able to predict (i) the temperature distribution on chip surface well as in the volume under short-circuit operations, (ii) the effect of the temperature on the distribution of the current flowing within the die and (iii) the effects of the ageing of the metallization layer on the current density and the temperature. In this paper, the electrical and thermal models are described as well as the implemented coupling scheme. |
| Databáze: | OpenAIRE |
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