Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetration
| Autor: | Hai-Sheng Lu, Xin-Ping Qu, Knut Gottfried, Nicole Ahner, Stefan E. Schulz |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Moisture absorption Moisture Plasma Penetration (firestop) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Chemical engineering Resist Sputtering Environmental chemistry Electrical and Electronic Engineering Porosity |
| Zdroj: | Microelectronic Engineering. 106:85-90 |
| ISSN: | 0167-9317 |
| Popis: | This paper investigates the influence of CH"4, NH"3, H"2 and He plasma on properties of porous low-k film and its effects on resisting moisture absorption during CMP and ions penetration from sputtering. It is found that the H"2, He, NH"3 plasma can cause aggressive carbon depletion in the porous low-k films and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and result in increase of the k value and leakage current density. The CH"4 plasma can make low-k material more resist against moisture uptake and keep the k value stable and a good electrical property of the low-k films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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