Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes
| Autor: | C. De Santi, Matteo Meneghini, Piotr Perlin, Desiree Monti, Agata Bojarska, Enrico Zanoni, Gaudenzio Meneghesso |
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| Rok vydání: | 2018 |
| Předmět: |
Risk
Materials science Laser diodes Dislocations Optical power 02 engineering and technology Electron 01 natural sciences Spectral line law.invention Coatings and Films Stress (mechanics) Degradation law Atomic and Molecular Physics 0103 physical sciences Electronic Optical and Magnetic Materials Electrical and Electronic Engineering Safety Risk Reliability and Quality Diode 010302 applied physics DLTS InGaN Electronic Optical and Magnetic Materials Atomic and Molecular Physics and Optics Condensed Matter Physics Surfaces Coatings and Films Condensed matter physics Subthreshold conduction 021001 nanoscience & nanotechnology Laser Surfaces Reliability and Quality and Optics Safety Dislocation 0210 nano-technology |
| Zdroj: | Microelectronics Reliability. :864-867 |
| ISSN: | 0026-2714 |
| Popis: | The aim of this paper is to illustrate the dependence of DLTS characteristics and degradation of InGaN-based laser diodes (LDs) on the density of dislocations. Three groups of multi-quantum well LDs with different dislocation densities were submitted to constant current stress, at room temperature: the analysis is based on combined electrical-optical measurements and Deep-Level Transient Spectroscopy (DLTS) investigation was made before and after stress. DLTS results show the presence of a hole trap in all the samples, whose intensity is related to the dislocation density. Constant current stress induces a significant decrease in the optical power (subthreshold regime), not related exclusively to the dislocation density, and the appearance of a new deep level for electrons (point defect generated after stress). |
| Databáze: | OpenAIRE |
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