Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping
| Autor: | Chennupati Jagadish, Zhuting Sun, Tim Burgess, Hark Hoe Tan, Andrei Kogan |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Orders of magnitude (temperature) Nanowire Bioengineering 02 engineering and technology Dielectric 01 natural sciences Condensed Matter::Materials Science 0103 physical sciences General Materials Science Electrical and Electronic Engineering Surface states 010302 applied physics Condensed matter physics business.industry Mechanical Engineering Doping Degenerate energy levels Conductance General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Semiconductor Mechanics of Materials 0210 nano-technology business |
| Zdroj: | Nanotechnology. |
| ISSN: | 1361-6528 |
| Popis: | We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatureslt;igt;Tlt;/igt;. The wire resistance Rlt;subgt;Wlt;/subgt; and the zero bias resistance Rlt;subgt;Clt;/subgt;, dominated by the contacts, exhibit very different responses to temperature changes. While Rlt;subgt;Wlt;/subgt; shows almost no dependence onlt;igt;Tlt;/igt;, Rlt;subgt;Clt;/subgt; varies by several orders of magnitude as the devices are cooled from room temperature to T= 5 K. We develop a model that employs a sharp donor level very low in the GaAs conduction band and show that our observations are consistent with the model predictions. We then demonstrate that such measurements can be used to estimate carrier properties in nanostructured semiconductors and obtain an estimate for Nlt;subgt;Dlt;/subgt;, the doping density in our samples. We also discuss the effects of surface states and dielectric confinement on carrier density in semiconductor nanowires. |
| Databáze: | OpenAIRE |
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