Combining RAM technologies for hard-error recovery in L1 data caches working at very-low power modes

Autor: Lorente Garcés, Vicente Jesús, Valero Bresó, Alejandro, Sahuquillo Borrás, Julio, Petit Martí, Salvador Vicente, Canal, Ramón, López Rodríguez, Pedro Juan, Duato Marín, José Francisco
Přispěvatelé: Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors, Universitat Politècnica de Catalunya. ARCO - Microarquitectura i Compiladors
Jazyk: angličtina
Rok vydání: 2013
Předmět:
Zdroj: Scopus-Elsevier
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Popis: Low-power modes in modern microprocessors rely on low frequencies and low voltages to reduce the energy budget. Nevertheless, manufacturing induced parameter variations can make SRAM cells unreliable producing hard errors at supply voltages below Vccmin. Recent proposals provide a rather low fault-coverage due to the fault coverage/overhead trade-off. We propose a new faulttolerant L1 cache, which combines SRAM and eDRAM cells in L1 data caches to provide 100% SRAM hard-error fault coverage. Results show that, compared to a conventional cache and assuming 50% failure probability at low-power mode, leakage and dynamic energy savings are by 85% and 62%, respectively, with a minimal impact on performance.
This work was supported by the Spanish MICINN (TIN2010-18368) with the Consolider-Ingenio 2010 Programme co-funded by the European Commission FEDER funds (CSD2006-00046) and co-funded with the Plan E funds (TIN2009-14475-C04-01). Additionaly, it was supported by Generalitat de Catalunya (2009SGR1250), by FP7 program of the European Commission (TRAMS-248789), and by Spanish MINECO (TIN2012-38341-C04-01).
Databáze: OpenAIRE