The lpGBTIA, a 2.5 Gbps Radiation-Tolerant Optical Receiver using InGaAs photodetector
| Autor: | Paulo Moreira, R. Francisco, Csaba Soos, Stephane Detraz, Francois Vasey, Jan Troska, Mohsine Menouni, C Sigaud, Lauri Olantera |
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| Přispěvatelé: | Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
irradiation business.industry radiation: effect integrated circuit Photodetector indium Radiation 7. Clean energy impedance amplifier electronics: readout gallium: arsenic semiconductor detector Optoelectronics [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] Detectors and Experimental Techniques business performance electronics: design |
| Zdroj: | PoS Topical Workshop on Electronics for Particle Physics Topical Workshop on Electronics for Particle Physics, Sep 2019, Santiago de Compostela, Spain. pp.030, ⟨10.22323/1.370.0030⟩ |
| Popis: | International audience; The Low Power GigaBit Transimpedance Amplifier (lpGBTIA) is the optical receiver amplifier in the lpGBT chipset. It is a highly sensitive transimpedance amplifier designed to operate at 2.56 Gbps. It is implemented in a commercial 65 nm CMOS process. The device has been designed for radiation tolerance and, in particular, to accommodate the radiation effects in photodiodes that manifest themselves as an increase of both their dark current and junction capacitance. The optical receiver consisting of the lpGBTIA connected to an InGaAs photodiode has been successfully tested and irradiation tests showed that the power penalty remains below 4 dBm for exposition to a very high neutron fluences of the order of 10$^{15}$ n/cm$^2$. |
| Databáze: | OpenAIRE |
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