Comparative Case Study on the Self-Powered Synchronous Switching Harvesting Circuits With BJT or MOSFET Switches
| Autor: | Fabien Formosa, Adrien Badel, Weiqun Liu, Caiyou Zhao, Guangdi Hu, Qiao Zhu |
|---|---|
| Přispěvatelé: | Laboratoire SYstèmes et Matériaux pour la MEcatronique (SYMME), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]) |
| Rok vydání: | 2018 |
| Předmět: |
Computer science
BJT Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 7. Clean energy Capacitance law.invention Current-driven MOSFET [SPI]Engineering Sciences [physics] Parasitic capacitance law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS Electronic circuit Synchronous switching circuit Voltage-driven business.industry 020208 electrical & electronic engineering Bipolar junction transistor Electrical engineering 021001 nanoscience & nanotechnology Piezoelectric generator Capacitor Semiconductor Field-effect transistor Resistor 0210 nano-technology business Hardware_LOGICDESIGN Voltage |
| Zdroj: | IEEE Transactions on Power Electronics IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 33 (11), pp.9506-9519. ⟨10.1109/tpel.2018.2790965⟩ |
| ISSN: | 1941-0107 0885-8993 |
| Popis: | Self-powered realization for synchronous switching circuits is a hot spot for piezoelectric vibration energy harvesting. Two typical kinds of switches, bipolar junction transistor (BJT) or metal–oxide semiconductor field effect transistor (MOSFET) are popularly used without a clear understanding about the performance difference. In this paper, comparative investigations about adopting these two types of switches based on a case study are performed. It is determined that the performance difference comes from three aspects: the gate parasitic capacitance, the turning-on threshold, and the driven mechanism. In particular, the third one imposes a critical influence on the performance. Investigations are performed on the self-powered synchronous switching circuit of two possible methods: with electronic breakers or with external control units. The results from simulations and experiments show that the current-driven mechanism limits the available performance in the case of the BJT switch in comparison with the case of the MOSFET switch. The difference is especially obvious for the cases of large piezoelectric capacitance and open-circuit voltage. A preliminary design guideline is concluded that the MOSFET is probably a better choice with the same voltage and current ratings in most cases. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|