Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method
| Autor: | Zoran Prijić, Ninoslav Stojadinovic, Nikola Mitrovic, Branislav Ranđelović, Danijel Dankovic |
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| Rok vydání: | 2020 |
| Předmět: |
Negative-bias temperature instability
Materials science business.industry vdmosfet lcsh:Electronics lcsh:TK7800-8360 modeling Electrical element Mechanics Power law Electronic Optical and Magnetic Materials Power (physics) law.invention Threshold voltage least square method Semiconductor law Electrical network nbti electrical circuit Electrical and Electronic Engineering business Electronic circuit |
| Zdroj: | Informacije MIDEM, Vol 50, Iss 3, Pp 205-214 (2020) |
| ISSN: | 2232-6979 0352-9045 |
| DOI: | 10.33180/infmidem2020.305 |
| Popis: | Negative bias temperature instability (NBTI) is a phenomenon commonly observed in p-channel metal-oxide semiconductor (MOS) devices simultaneously exposed to elevated temperature and negative gate voltage. This paper studies threshold voltage shift under static stress associated with the NBT stress induced buildup of both interface traps and oxide trapped charge in the commercial p-channel power VDMOSFETs IRF9520, with the goal to design an electrical model. Experiments have done with the goal to obtain data for modeling. Change of threshold voltage follow power law t n , where parameter n is different depending on the stressing phase and stressing conditions. Two modeling circuits are proposed and modeling circuit elements values are analyzed. Values of modeling circuits elements are calculated using least square method approximation conducted on obtained experimental results. Modeling results of both circuits are compared with the measured results and then further discussed. |
| Databáze: | OpenAIRE |
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