Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
| Autor: | O.V. Konoreva, V.P. Tartachnyk, M.B. Pinkovska, Ye. V. Malyi, V.V. Shlapatska, V.G. Vorobiov |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Nuclear and High Energy Physics
Materials science breakdown irradiation business.industry electrons GaP Electron lcsh:Atomic physics. Constitution and properties of matter law.invention lcsh:QC170-197 chemistry.chemical_compound chemistry law reverse current Gallium phosphide gallium phosphide Optoelectronics light-emitting diode current-voltage characteristics Irradiation business Light-emitting diode |
| Zdroj: | Âderna Fìzika ta Energetika, Vol 16, Iss 3, Pp 238-241 (2015) |
| ISSN: | 2074-0565 |
| Popis: | Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V) is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA) irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction. |
| Databáze: | OpenAIRE |
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