Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density

Autor: Enrico G. Keim, A. van Silfhout, L. Wolterbeek
Jazyk: angličtina
Rok vydání: 1987
Předmět:
Zdroj: Surface science, 180(2-3), 565-598. Elsevier
ISSN: 0039-6028
Popis: This paper describes a study concerning the interaction of molecular oxygen (O2) and nitrous oxide (N2O) with the clean Si(100) 2 × 1 surface in ultrahigh vacuum at 300 K. Differential reflectometry (DR) in the photon energy range of 1.5?4.5 eV, Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been used to monitor these solid-gas reactions. With this combination of techniques it is possible to make an analysis of the (geometric and electronic) structure and chemical composition of the surface layer. The aim of the present study was to give a description of the geometric nature of the oxygen covered Si(100) surface. For that purpose we have used both molecular (O2) and atomic oxygen (as released by decomposition of N2O) to oxidize the clean Si(100)2 × 1 surface.
Databáze: OpenAIRE