Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells
| Autor: | R. García-Hernansanz, E. García-Hemme, Germán González-Díaz, Javier Olea, Álvaro del Prado, D. Montero, EnriqueSan Andres, Ignacio Mártil |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Amorphous silicon
Materials science Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences Solar cell Crystalline silicon Electrical and Electronic Engineering Thin film 010302 applied physics Heterojunction Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Electrónica Electricidad 0210 nano-technology |
| Zdroj: | E-Prints Complutense. Archivo Institucional de la UCM instname E-Prints Complutense: Archivo Institucional de la UCM Universidad Complutense de Madrid |
| Popis: | We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications. |
| Databáze: | OpenAIRE |
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