Strain in heterogeneous quantum devices with atomic layer deposition
| Autor: | John J. L. Morton, Oscar W. Kennedy, Christoph W. Zollitsch, James O'Sullivan, Christopher Thomas, Stafford Withington |
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| Přispěvatelé: | Kennedy, Oscar W [0000-0002-1945-960X], Apollo - University of Cambridge Repository, Kennedy, OW [0000-0002-1945-960X] |
| Rok vydání: | 2021 |
| Předmět: |
Paper
Materials science Strain (chemistry) business.industry Physics::Instrumentation and Detectors quantum memory 02 engineering and technology Quantum devices 021001 nanoscience & nanotechnology 5104 Condensed Matter Physics 01 natural sciences Quantum memory Atomic layer deposition Condensed Matter::Materials Science strain 0103 physical sciences atomic layer deposition Optoelectronics 010306 general physics 0210 nano-technology business 51 Physical Sciences ESR |
| Zdroj: | Materials for Quantum Technology |
| DOI: | 10.17863/cam.77729 |
| Popis: | We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left T 2 (or temporal inhomogeneities) unchanged in these natural silicon devices. |
| Databáze: | OpenAIRE |
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