Superconducting parallel nanowire detector with photon number resolving functionality
| Autor: | Vitaliy Seleznev, Gregory Goltsman, Francesco Mattioli, Alessandro Gaggero, Alexander Divochiy, David Bitauld, Alexander Korneev, Nataliya Kaurova, Roberto Leoni, Olga Minaeva, Francesco Marsili, Andrea Fiore |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics, Semiconductor Nanophotonics |
| Předmět: |
multiplication noise
Materials science Photon Physics - Instrumentation and Detectors Light business.industry Detector Nanowire FOS: Physical sciences superconducting single-photon detector Instrumentation and Detectors (physics.ins-det) Substrate (electronics) thin superconducting films Noise (electronics) Atomic and Molecular Physics and Optics Full width at half maximum Wavelength telecom wavelength photon number resolving detector NbN Wavelengths Optoelectronics Quantum efficiency business |
| Zdroj: | Journal of Modern Optics, 56(2-3), 334-344. Taylor and Francis Ltd. Journal of modern optics 56 (2009): 334–344. doi:10.1080/09500340802220729 info:cnr-pdr/source/autori:Marsili F; Bitauld D; Fiore A; Gaggero A; Leoni R; Mattioli F; Divochiy A; Korneev A; Seleznev V; Kaurova N; Minaeva O; Goltsman G/titolo:Superconducting parallel nanowire detector with photon number resolving functionality/doi:10.1080%2F09500340802220729/rivista:Journal of modern optics (Print)/anno:2009/pagina_da:334/pagina_a:344/intervallo_pagine:334–344/volume:56 |
| ISSN: | 0950-0340 |
| Popis: | We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm wide, few nm thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS = 900C) or MgO (TS = 400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660 ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one-photon quantum efficiency can be estimated to be 3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
| Databáze: | OpenAIRE |
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