| Autor: |
Bhosle Vikram M, Rene Hesse, Chris Dubé, Thorsten Dullweber |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Energy Procedia. 38:430-435 |
| ISSN: |
1876-6102 |
| DOI: |
10.1016/j.egypro.2013.07.300 |
| Popis: |
Ion implantation is an attractive candidate for PERC solar cells due to the single-sided emitter phosphorus doping. The oxide, which is formed during the implant anneal, can be used as rear passivation of PERC cells. However, the SiO 2 /SiN x rear passivation is very sensitive to the rear surface roughness and surface preparation. Hence, in this paper we evaluate Al 2 O 3 /SiN x rear passivation layers in combination with an oxide passivated ion-implanted emitter. We obtain emitter saturation current densities of 93 fA/cm 2 , which is significantly lower compared to a typical POCl 3 diffused emitter with 140 fA/cm 2 . Ion-implanted PERC cells with Al 2 O 3 /SiN x rear passivation show conversion efficiencies up to 20.0% which is comparable to POCl 3 -diffused PERC cells. The emitter dopant profile can be adjusted by the thermal budget of the anneal in order to optimize the process window between J sc and FF losses. The IQE and reflectance of implanted and POCl 3 -diffused PERC cells in the long wavelength regime are almost identical which demonstrates the successful implementation of the Al 2 O 3 /SiN x rear passivation to PERC cells with ion-implanted emitters. Future work will focus on simplifying the process flow in order to obtain a lean industrially manufacturable PERC process, leveraging the single side doping via ion implantation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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