Atomic and Molecular Layer Deposition of Chiral Thin Films Showing up to 99% Spin Selective Transport
| Autor: | H. Al-Bustami, S. Khaldi, O. Shoseyov, S. Yochelis, K. Killi, I. Berg, E. Gross, Y. Paltiel, R. Yerushalmi |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Nano Letters. 22:5022-5028 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.2c01953 |
| Popis: | Spin electronics is delivering a much desired combination of properties such as high speed, low power, and high device densities for the next generation of memory devices. Utilizing chiral-induced spin selectivity (CISS) effect is a promising path toward efficient and simple spintronic devices. To be compatible with state-of-the-art integrated circuits manufacturing methodologies, vapor phase methodologies for deposition of spin filtering layers are needed. Here, we present vapor phase deposition of hybrid organic-inorganic thin films with embedded chirality. The deposition scheme relies on a combination of atomic and molecular layer deposition (A/MLD) utilizing enantiomeric pure alaninol molecular precursors combined with trimethyl aluminum (TMA) and water. The A/MLD deposition method deliver highly conformal thin films allowing the fabrication of several types of nanometric scale spintronic devices. The devices showed high spin polarization (close to 100%) for 5 nm thick spin filter layer deposited by A/MLD. The procedure is compatible with common device processing methodologies. |
| Databáze: | OpenAIRE |
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