Optimization guidelines of A2RAM cell performance through TCAD simulations
| Autor: | F. Tcheme Wakam, J. Lacord, S. Martinie, J.-Ch. Barbe, M. Bawedin, S. Cristoloveanu |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering Hardware_MEMORYSTRUCTURES TCAD electrical characterization business.industry Potential candidate 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Reliability engineering 1T-DRAM DRAM 0103 physical sciences Electronic engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business Technology CAD optimization Dram A2RAM |
| Zdroj: | 2017 SISPAD Proceedings 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan. pp.329-332, ⟨10.23919/SISPAD.2017.8085331⟩ |
| Popis: | session: Future Devices (12.4); International audience; A2RAM belongs to the 1T-DRAM family and is a potential candidate to replace the traditional 1T/1C- DRAM [1-2]. In this paper, we propose a TCAD simulation [3] methodology to assess A2RAM performance, validated through experimental measurement. It is then used to provide further insight in A2RAM and optimization guidelines. |
| Databáze: | OpenAIRE |
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