Radiation effects in nitride read-only memories
| Autor: | G. Cannella, T. Schillaci, Fabio Principato, Felix Palumbo, F. Celi, Sebania Libertino, D. Corso, G. Muré, M. Lisiansky, Antonio Marino, Yakov Roizin, S. Lombardo, S. Giarusso |
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| Přispěvatelé: | Libertino,S, Corso,D, Murè,G, Marino,A, Palumbo,F, Principato,F, Cannella,G, Schillaci,T, Giarusso,S, Celi,F, Lisiansky,M, Roizin,Y, Lombardo,S |
| Rok vydání: | 2010 |
| Předmět: |
Radiation effect
DEVICE Radiation Nitride NONVOLATILE MEMORY memorie X-ray gamma-ray Irradiation Electrical and Electronic Engineering Safety Risk Reliability and Quality NROM HEAVY-ION EXPOSURE Leakage (electronics) business.industry Chemistry Subthreshold conduction Electrical engineering Condensed Matter Physics light ions Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage CELLS Optoelectronics business |
| Zdroj: | Microelectronics and reliability 50 (2010): 1857–1860. doi:10.1016/j.microrel.2010.07.06 info:cnr-pdr/source/autori:Libertino S; Corso D; Mure G; Marino A; Palumbo F; Principato F; Cannella G; Schillaci T; Giarusso S; Celi F; Lisiansky M; Roizin Y; Lombardo S/titolo:Radiation effects in nitride read-only memories/doi:10.1016%2Fj.microrel.2010.07.06/rivista:Microelectronics and reliability/anno:2010/pagina_da:1857/pagina_a:1860/intervallo_pagine:1857–1860/volume:50 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2010.07.068 |
| Popis: | We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after γ or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 10 11 ions/cm 2 (equivalent to 1 Mrad(Si) of TID tolerance). |
| Databáze: | OpenAIRE |
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