Improved modeling of isolated EDMOS in advanced CMOS technologies
| Autor: | Helene Beckrich Ros, Dominique Golanski, Sorin Cristoloveanu, Antoine Litty, Sylvie Ortolland |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Engineering
Cover (telecommunications) Spice Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention MOSFET law 0103 physical sciences Electronic engineering Hardware_INTEGRATEDCIRCUITS [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS 010302 applied physics SPICE business.industry Transistor Electrical engineering 021001 nanoscience & nanotechnology CMOS integrated circuits Integrated injection logic CMOS Integrated circuit modelling 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | ICICDT 2013 (International Conference on IC Design and Technology ICICDT 2013 (International Conference on IC Design and Technology, May 2013, Pavia, Italy. pp.25-28, ⟨10.1109/ICICDT.2013.6563295⟩ ICICDT |
| Popis: | Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model accounts for the various parasitic bipolar components (PBCs) that are fully characterized. This model can cover various architectures, from bulk-Si to FDSOI. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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