TID Sensitivity of NAND Flash Memory Building Blocks
| Autor: | S. Beltrami, Marta Bagatin, A. Visconti, Alessandro Paccagnella, Simone Gerardin, G. Cellere |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Nuclear and High Energy Physics
Engineering radiation effects total dose Floating gate memories NAND gate Hardware_PERFORMANCEANDRELIABILITY Total dose effects Flash memories Flash memory law.invention Flash (photography) Gate array law X-rays Electronic engineering Sensitivity (control systems) Electrical and Electronic Engineering Hardware_MEMORYSTRUCTURES Radiation business.industry Transistor Nuclear Energy and Engineering Embedded system business Failure mode and effects analysis Decoding methods |
| Popis: | NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution, we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the characteristic failure mode for each part. |
| Databáze: | OpenAIRE |
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