Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO

Autor: Yuting Chen, Jianwen Wu, Yu Yan, Jun Ye Lin, Jin Shi Zhao, Chen Wang, Cheol Seong Hwang
Rok vydání: 2020
Předmět:
Zdroj: ACS applied materialsinterfaces. 12(9)
ISSN: 1944-8252
Popis: A flexible resistive switching (RS) memory was fabricated on a Ta/TaOx/Pt/polyimide (PI) structure with various TaOx thicknesses (5, 10, and 15 nm). The oxygen vacancy (VO) concentrations in the Ta...
Databáze: OpenAIRE
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