Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO
Autor: | Yuting Chen, Jianwen Wu, Yu Yan, Jun Ye Lin, Jin Shi Zhao, Chen Wang, Cheol Seong Hwang |
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Rok vydání: | 2020 |
Předmět: |
Materials science
business.industry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Crossbar array 01 natural sciences Flexible electronics Oxygen vacancy 0104 chemical sciences Resistive random-access memory Resistive switching Electroforming Optoelectronics General Materials Science 0210 nano-technology business Polyimide |
Zdroj: | ACS applied materialsinterfaces. 12(9) |
ISSN: | 1944-8252 |
Popis: | A flexible resistive switching (RS) memory was fabricated on a Ta/TaOx/Pt/polyimide (PI) structure with various TaOx thicknesses (5, 10, and 15 nm). The oxygen vacancy (VO) concentrations in the Ta... |
Databáze: | OpenAIRE |
Externí odkaz: |
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