Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Autor: Nam-Kwang Cho, Junwoo Park, Keon-Hee Lim, Kapsoo Yoon, Jin-Won Lee, Donggun Lee, Youn Sang Kim
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports
ISSN: 2045-2322
DOI: 10.1038/s41598-018-23990-3
Popis: The technology for electrical current passing through an insulator thin-film between two electrodes is newly getting spotlights for substantial potentials toward advanced functional devices including a diode and a resistive switching device. However, depending on an electrode-limited conduction mechanisms of the conventional devices, a narrow processing window for a thickness of the insulator thin-film and an inability to control a magnitude and direction of the currents are challenges to overcome. Herein, we report a new approach to enable electrical charge carriers to pass stably through a relatively-thick insulator layer and to control a magnitude and polarity of the currents by applying an oxide semiconductor electrode in a metal/insulator/metal structure. We reveal that the electrical conduction in our devices follows a space charge-limited conduction mechanism which mainly depends on the charge carriers injected from contacts. Therefore, characteristics of the current including a current value and a rectification ratio of input signal are precisely controlled by electrical properties of the oxide semiconductor electrode. The unique current characteristics in metal/insulator/oxide semiconductor structures give extendable inspirations in electronic materials science, even a prominent solution for various technology areas of electronics.
Databáze: OpenAIRE
Externí odkaz:
Nepřihlášeným uživatelům se plný text nezobrazuje