Photochemical conversion of tin-oxo cage compounds studied using hard x-ray photoelectron spectroscopy
| Autor: | Zhang, Y., Haitjema, J., Liu, X., Johansson, F., Lindblad, A., Castellanos Ortega, S., Ottosson, N., Brouwer, A.M., Hohle, C.K. |
|---|---|
| Přispěvatelé: | Spectroscopy and Photonic Materials (HIMS, FNWI), HIMS Other Research (FNWI) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photoemission spectroscopy Mechanical Engineering Extreme ultraviolet lithography Atom and Molecular Physics and Optics Analytical chemistry chemistry.chemical_element 02 engineering and technology Photoresist 021001 nanoscience & nanotechnology Condensed Matter Physics Photochemistry 01 natural sciences Chemical reaction Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Chemical state Chemical species chemistry X-ray photoelectron spectroscopy 0103 physical sciences Atom- och molekylfysik och optik Electrical and Electronic Engineering 0210 nano-technology Tin |
| Zdroj: | Journal of Micro/Nanolithography, MEMS and MOEMS, 16(2):023510. SPIE Advances in Patterning Materials and Processes XXXIV: 27 February–2 March 2017, San Jose, California, United States Advances in Patterning Materials and Processes XXXIV |
| ISSN: | 1932-5150 |
| Popis: | Several metal-containing molecular inorganic materials are currently considered as photoresists for extreme ultraviolet lithography (EUVL). This is primarily due to their high EUV absorption cross section and small building block size, properties which potentially allow both high sensitivity and resolution as well as low line-edge roughness. The photochemical reaction mechanisms that allow these kinds of materials to function as photoresists, however, are still poorly understood. As a step in this direction, we here discuss photochemical reactions upon deep UV (DUV) irradiation of a model negative-tone EUV photoresist material, namely the well-defined molecular tin-oxo cage compound [(SnR)12O14(OH)6]X2 (R = organic group; X = anion) which is spin coated to thin layers of 20 nm. The core electronic structure (Sn 3d, O 1s and C 1s) of fresh and DUV exposed films were then investigated using synchrotron radiationbased hard X-ray photoelectron spectroscopy (HAXPES). This method provides information about the structure and chemical state of the respective atoms in the material. We performed a comparative HAXPES study of the composition of the tin-oxo cage compound [(SnR)12O14(OH)6](OH)2, either fresh directly after spin-coated vs. DUV-exposed materials under either ambient condition or under a dry N2 atmosphere. Different chemical oxidation states and concentrations of atoms and atom types in the fresh and exposed films were found. We further found that the chemistry resulting from exposure in air and N2 is strikingly different, clearly illustrating the influence of film-gas interactions on the (photo)chemical processes that eventually determine the photoresist. Finally, a mechanistic hypothesis for the basic DUV photoreactions in molecular tin-oxo cages is proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|