| Popis: |
During the last two decades HgCdTe, InSb and InAs infrared (IR) photodiodes have de‐ veloped rapidly for utilization in second generation thermal-imaging systems. Obviously, they are regarded as the most important candidates for development of third generation systems as well. Despite this fact many problems still exist in manufacturing technology as well as in understanding of physical phenomena in materials and photodiodes. As a re‐ sult, threshold parameters of commercially available IR photodiodes are far from the val‐ ues predicted theoretically. |
