| Autor: |
Sunny Sadana, V. Pavan Kishore, Udayan Ganguly, Saurabh Lodha, Prashanth Paramahans |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
IndraStra Global. |
| ISSN: |
2381-3652 |
| DOI: |
10.1063/1.3700965 |
| Popis: |
We report a simple method of forming Ohmic contacts to n and p-type germanium (Ge) simultaneously using Au nanocrystals embedded in Ti contact metal. The electric field due to the work-function difference of Ti and Au reduces the tunneling resistance at the Ti-Au/Ge interface for n and p-type contacts. The nanocrystal-based contacts on n-Ge exhibit quasi-Ohmic current-voltage characteristics with >1000x increase in current density and an apparent reduction of 0.18 eV in the barrier height over Ti/n-Ge and Au/n-Ge contacts that show rectifying characteristics due to Fermi level pinning. On n(+)Ge, the nanocrystal-based contacts exhibit Ohmic characteristics with >35x reduction in zero-bias resistance over Ti/n(+)Ge contacts. Similar to Ti and Au contacts on p-Ge, Au nanocrystals embedded in Ti continue to exhibit Ohmic characteristics. This is in contrast to methods that convert p-type contacts from Ohmic to rectifying in the process of forming an Ohmic contact on n-Ge by inserting a thin dielectric layer between the metal and Ge. Device simulations reinforce the observed decrease in tunneling resistance due to the enhanced electric field at the Ti-Au/Ge interface. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700965] |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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