Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

Autor: M. Ridene, Noelle Gogneau, Adrian Balan, Abdelkarim Ouerghi, Abhay Shukla
Přispěvatelé: Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2012
Předmět:
Zdroj: Surface Science
Surface Science, Elsevier, 2012, 606 (3-4), pp.217-220. ⟨10.1016/j.susc.2011.09.021⟩
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (3-4), pp.217-220. ⟨10.1016/j.susc.2011.09.021⟩
ISSN: 0039-6028
1879-2758
DOI: 10.1016/j.susc.2011.09.021
Popis: International audience; The current method of growing graphene by thermal decomposition of 3C-SiC(100) on silicon substrates is technologically attractive. Here, we investigate the evolution of the surface graphitization as a function of the synthesis temperature. We establish that the carbon enrichment of the surface is characterized by a clear modulation of the surface potential and structuration. The structural properties analysis of the graphene layers by low energy electron diffraction and micro-Raman spectroscopy demonstrate a graphitization of the surface
Databáze: OpenAIRE