X-ray diffraction studies of electrostatic sprayed SnO2:F films
| Autor: | Jean Podlecki, Antonio Khoury, Youssef Zaatar, R. Al Asmar, D. Zaouk, Alain Foucaran |
|---|---|
| Přispěvatelé: | Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2007 |
| Předmět: |
010302 applied physics
Materials science Doping General Engineering Analytical chemistry chemistry.chemical_element 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology Tin oxide 01 natural sciences Free carrier [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry 0103 physical sciences X-ray crystallography Fluorine Electrical measurements 0210 nano-technology Pyrolysis |
| Zdroj: | Microelectronics Journal Microelectronics Journal, Elsevier, 2007, 38 (8-9), pp.884-887. ⟨10.1016/j.mejo.2007.07.072⟩ |
| ISSN: | 0026-2692 |
| DOI: | 10.1016/j.mejo.2007.07.072 |
| Popis: | International audience; Fluorine-doped tin oxide films were deposited by electrostatic spray pyrolysis technique (ESP), on 1cmx1cm Corning 7059 substrates. The structural and electrical properties of the deposited films with different doping levels are studied. Relative variations in the structural properties were explained on the basis of structural factor calculations. The results show that the incorporation of fluorine atoms took place only at substitutional sites leading to an increase in free carrier concentration |
| Databáze: | OpenAIRE |
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