Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
| Autor: | H. Ezzaouia, Marouan Khalifa, M. Hajji |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
inorganic chemicals
Materials science Silicon Annealing (metallurgy) Nanochemistry chemistry.chemical_element Nanotechnology Porous silicon complex mixtures Materials Science(all) Getter Silicon powder General Materials Science Gettering Nano Express Thermal annealing ICP-AES technology industry and agriculture Nanocrystalline silicon equipment and supplies Condensed Matter Physics stomatognathic diseases Vapor-etching Chemical engineering chemistry Inductively coupled plasma atomic emission spectroscopy Inductively coupled plasma |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X |
| Popis: | Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C. |
| Databáze: | OpenAIRE |
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