Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains
| Autor: | M. Gaillardin, Marty R. Shaneyfelt, F. Essely, V.F. Cavrois, Vincent Pouget, Joseph S. Melinger, Dale McMorrow, N. Fel, P. Paillet, Daisuke Kobayashi, J.R. Schwank, Richard S. Flores, Olivier Duhamel, Paul E. Dodd |
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| Přispěvatelé: | Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Naval Research Laboratory (NRL), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Darracq, Frédéric |
| Rok vydání: | 2008 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science 010308 nuclear & particles physics business.industry Transistor Electrical engineering Silicon on insulator Nanosecond 01 natural sciences [SPI.TRON] Engineering Sciences [physics]/Electronics [SPI.TRON]Engineering Sciences [physics]/Electronics law.invention Computational physics Nuclear Energy and Engineering law 0103 physical sciences Inverter Irradiation Sensitivity (control systems) Electrical and Electronic Engineering business ComputingMilieux_MISCELLANEOUS Pulse-width modulation Electronic circuit |
| Zdroj: | IEEE Transactions on Nuclear Science IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853 IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853 |
| ISSN: | 0018-9499 |
| Popis: | The propagation of single event transients (SET) is measured and modeled in SOI and bulk inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to determine the SET pulse width measured at the output of long chains of inverters after irradiation. Initially, narrow transients, less than 200 ps at the struck inverter, are progressively broadened into the nanosecond range. PIPB is induced by dynamic floating body effects (also called history effects) in SOI and bulk transistors, which depend on the bias state of the transistors before irradiation. Implications for SET hardness assurance, circuit modelling and hardening are discussed. Floating body and PIPB effects are usually not taken into account in circuit models, which can lead to large underestimation of SET sensitivity when using simulation techniques like fault injection in complex circuits. |
| Databáze: | OpenAIRE |
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